CS2N80A3HY mosfet equivalent, silicon n-channel power mosfet.
l Fast Switching l Low Gate Charge (Typical Data:12nC) l Low Reverse transfer capacitances(Typical:4.0pF) l 100% Single Pulse avalanche energy Test
Applications：
Power .
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol VDSS
ID
IDMa1 VGS EA.
VDSS
800 V
CS2N80 A3HY, the silicon N-channel Enhanced ID
2.0 A
VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 40 W
which reduce the conduction loss, improve switching
RDS(ON)Typ
4.8 Ω
performance and enhance the a.
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